Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress

Abstract:

The effect of forward-current stress of the body diode on the operating characteristics of various commercially-available SiC power MOSFETs was compared. The one set of recent-vintage second-generation 1200-V devices studied showed no degradation at all when the body diode was forward conducted—either in the body diode or the MOSFET characteristics. This is a distinct improvement from first generation 1200-V devices from various suppliers. This degradation phenomenon was consistent with the formation of stacking faults during current stress, which typically reduced MOSFET conductivity, and in some devices increased the Off-state leakage current. Although first-generation 1700-V MOSFET characteristics showed no degradation of the body diode, they did experience a degradation of the blocking voltage due to charge trapping during the stress.

• Periodical: Materials Science Forum (Volume 963)
• Pages: 583-587
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.583
• Online since: July 2019
• Authors: Ronald Green*, Aivars J. Lelis, Franklin L. Nouketcha
• Keywords: Basal Plane Dislocation, Body Diode Degradation, SiC Failure Modes

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