Temperature Dependence of dV/dt Impact on the SiC-MOSFET

Shuhei Nakata; Shota Tanaka

doi:10.4028/www.scientific.net/MSF.963.596

Paper Titles

Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode
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Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress
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Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature
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Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling
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Temperature Dependence of dV/dt Impact on the SiC-MOSFET
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1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions
p.600

Design Optimization of 1.2kV 4H-SiC Trench MOSFET
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Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
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Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Temperature Dependence of dV/dt Impact on the...

Temperature Dependence of dV/dt Impact on the SiC-MOSFET

Abstract:

Recentlly, high speed switching circuits using SiC power device have been developed for reduction of switching loss and downsizing of electric products. The high speed switching leads to the rapid changing of the drain voltage (dV/dt) during the switching period. This paper reports the effects of the dV/dt impact on the self-turn-on and the characteristics of SiC-MOSFET, especially the temperature dependence. The results shows that the gate bias voltage to suppress the self-turn-on is negatively correlated with the temperature. And it is also found that the dV/dt impact breaks down the gate source insulation and the dV/dt value to the breakdown is positively correlated with the temperature.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

596-599

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.596

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Online since:

July 2019

Authors:

Shuhei Nakata*, Shota Tanaka

Keywords:

dV/dt, Self-Turn-On, SiC-MOSFET

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References

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