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Paper Titles
Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling
p.592
Temperature Dependence of dV/dt Impact on the SiC-MOSFET
p.596
1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions
p.600
Design Optimization of 1.2kV 4H-SiC Trench MOSFET
p.605
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
p.609
Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
p.613
1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)
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An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode
p.621
Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET
p.625

Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization

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Abstract:

The effective modeling methodology of 4H-SiC trench gate MOSFETs is presented. The potential barrier lowering at the MOS channel region suggested by I-V measurements is implemented to commercial TCAD tool as the net-doping reduction. The proposed model is validated by comparison of TCAD simulations with I-V measurements and SEM image observations.

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Silicon Carbide and Related Materials 2018 View Preview

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Periodical:

Materials Science Forum (Volume 963)

Pages:

609-612

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.609

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Online since:

July 2019

Authors:

Atsushi Sakai*, Katsumi Eikyu, Kenichi Hisada, Yasuhiro Yamashita, Koichi Arai, Hiroyuki Arie, Yutaka Akiyama, Tomohiro Yamashita

Keywords:

Post Oxidation Anneal, Potential Barrier Lowering, Scanning Electron Microscope (SEM), Technology Computer-Aided Design (TCAD), Trench-Gate MOSFET (UMOSFET)

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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