An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode

Andrei Mihaila; Enea Bianda; Lars Knoll; Philippe Godignon; Victor Soler; Lukas Kranz; Giovanni Alfieri; Uwe Badstübner; Francisco Canales; Munaf Rahimo

doi:10.4028/www.scientific.net/MSF.963.621

Paper Titles

Design Optimization of 1.2kV 4H-SiC Trench MOSFET
p.605

Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
p.609

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
p.613

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)
p.617

An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode
p.621

Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET
p.625

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
p.629

Impact of Interface Trap Density of SiC-MOSFET in High-Temperature Environment
p.633

Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well
p.639

HomeMaterials Science ForumMaterials Science Forum Vol. 963An Investigation into the Dynamic Behavior of...

An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode

Abstract:

This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared to that of a 3.3kV JBS diode.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

621-624

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.621

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Online since:

July 2019

Authors:

Andrei Mihaila*, Enea Bianda, Lars Knoll, Philippe Godignon, Victor Soler, Lukas Kranz, Giovanni Alfieri, Uwe Badstübner, Francisco Canales, Munaf Rahimo

Keywords:

3,3kV, Body Diode, Dynamic Behavior, MOSFET

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References

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