Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

Tomoyasu Ishii; Shin Ichiro Kuroki; Hiroshi Sezaki; Seiji Ishikawa; Tomonori Maeda; Takahiro Makino; Takeshi Ohshima; Mikael Östling; Carl Mikael Zetterling

doi:10.4028/www.scientific.net/MSF.963.613

Paper Titles

Temperature Dependence of dV/dt Impact on the SiC-MOSFET
p.596

1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions
p.600

Design Optimization of 1.2kV 4H-SiC Trench MOSFET
p.605

Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
p.609

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
p.613

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)
p.617

An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode
p.621

Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET
p.625

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
p.629

HomeMaterials Science ForumMaterials Science Forum Vol. 963Suppression of Short-Channel Effects in 4H-SiC...

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

Abstract:

Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.613

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Online since:

July 2019

Authors:

Tomoyasu Ishii*, Shin Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Östling, Carl Mikael Zetterling

Keywords:

Harsh Environment Electronics, Short-Channel Effect (SCE), Trench MOSFET

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