1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions

Abstract:

This paper presents a study of the 1.2kV UMOSFETs with dual shielding regions. Numerical simulations demonstrate the importance of including dual shielding regions to achieve low specific on-resistance and high breakdown voltage. The optimized structure has a low specific on-resistance (R_on,sp) of 2.19 mΩ-cm², high breakdown voltage of 1470 V, low specific reverse transfer capacitance (C_gd,sp) of 17 pF/cm2 and excellent high-frequency figure-of-merit (HF-FOM) of 37 fs.

• Periodical: Materials Science Forum (Volume 963)
• Pages: 600-604
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.600
• Online since: July 2019
• Authors: Aditi Agarwal*, Ki Jeong Han, B. Jayant Baliga
• Keywords: Breakdown Voltage, Reverse Transfer Capacitance, Silicon Carbide, Specific On-Resistance (R_SP,ON), Threshold Voltage, Trench-Gate MOSFET (UMOSFET)

References

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