Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling

Dinh Lam Dang; Matthieu Urbain; Stephane Rael

doi:10.4028/www.scientific.net/MSF.963.592

Paper Titles

Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
p.572

Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode
p.576

Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress
p.583

Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature
p.588

Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling
p.592

Temperature Dependence of dV/dt Impact on the SiC-MOSFET
p.596

1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions
p.600

Design Optimization of 1.2kV 4H-SiC Trench MOSFET
p.605

Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
p.609

HomeMaterials Science ForumMaterials Science Forum Vol. 963Temperature Dependency of Silicon Carbide MOSFET...

Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling

Abstract:

Silicon carbide (SiC) MOSFET features low on-resistance per area even at high temperatures compared to a silicon (Si) counterpart with the same voltage rating. However, SiC MOSFET exhibits a unique behavior over operating temperatures due to the presence of interface trap charges. The effect of temperature on the on-resistance of SiC MOSFET has been studied through experimental measurements at difference temperatures from - 30 °C to 150 °C. The results show that high contribution of channel resistance is the critical factor to determine the behavior of SiC MOSFET with temperature.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

592-595

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.592

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Online since:

July 2019

Authors:

Dinh Lam Dang*, Matthieu Urbain, Stephane Rael

Keywords:

4H-SiC MOSFET, Interface Traps, Modeling, On-Resistance, R_DS(ON), Temperature

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