Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature

Ki Jeong Han; B. Jayant Baliga

doi:10.4028/www.scientific.net/MSF.963.588

Paper Titles

Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes
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Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
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Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode
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Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress
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Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature
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Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling
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Temperature Dependence of dV/dt Impact on the SiC-MOSFET
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1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions
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Design Optimization of 1.2kV 4H-SiC Trench MOSFET
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Achieving Reduced Specific On-Resistance in 1.2 kV...

Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature

Abstract:

Power MOSFETs operate at elevated temperatures due to self-heating and hot ambient temperatures. This paper analyzes the increase in on-resistance with temperature for 1.2 kV rated 4H-SiC planar MOSFETs. The impact of various structural parameters are studied using analytical models supported by experimental data. This work defines how to achieve a low ratio [R_on(150°C)/R_on(25°C)] by structural optimization of 1.2 kV SiC planar MOSFETs for the first time. It is found that the inversion mode MOSFETs, fabricated by us in a 6 inch commercial foundry, have a lower ratio [R_on(150°C)/R_on(25°C)] than the accumulation mode MOSFETs, due to a better balance of change in channel and bulk mobility with temperature. Compared with typical commercially available MOSFETs, our fabricated accumulation mode and inversion mode MOSFETs exhibit a lower ratio [R_on(150°C)/R_on(25°C)], resulting in superior HF-FOM [R_onxQ_gd] at 150°C.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

588-591

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.588

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Online since:

July 2019

Authors:

Ki Jeong Han*, B. Jayant Baliga

Keywords:

4H-SiC, Elevated Temperature, Gate-to-Drain Charge, High Frequency FOM, MOSFET, On-Resistance, Reverse Transfer Capacitance, SiC

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References

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