Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes

Besar Asllani; Dominique Planson; Pascal Bevilacqua; Jean Baptiste Fonder; Beverley Choucoutou; Hervé Morel; Luong Viet Phung

doi:10.4028/www.scientific.net/MSF.963.567

Paper Titles

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
p.549

The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes
p.553

On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry
p.558

Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes
p.562

Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes
p.567

Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
p.572

Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode
p.576

Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress
p.583

Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature
p.588

HomeMaterials Science ForumMaterials Science Forum Vol. 963Advanced Electrical Characterisation of High...

Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes

Abstract:

This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t_rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

567-571

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.567

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Online since:

July 2019

Authors:

Besar Asllani*, Dominique Planson, Pascal Bevilacqua, Jean Baptiste Fonder, Beverley Choucoutou, Hervé Morel, Luong Viet Phung

Keywords:

4H-SiC Bipolar Diode, Device Processing, Device Robustness, Double-Pulse Test, High Current Stress, High Voltage Device

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