On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry

Nick Yun; Eric Liu; Woong Je Sung; Anne Sophie Larrea; Daniel Franca; Thomas Gorczyca; Alexander Bialy; Wen Li Collison; Jamie Prudhomme; Pui Yee Hung; Sean Valente; Shannon Dunn; Brian Sapp; Jeffrey Hedrick

doi:10.4028/www.scientific.net/MSF.963.558

Paper Titles

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars
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Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes
p.544

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
p.549

The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes
p.553

On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry
p.558

Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes
p.562

Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes
p.567

Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
p.572

Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode
p.576

HomeMaterials Science ForumMaterials Science Forum Vol. 963On the Development of 1700V SiC JBS Diodes in a...

On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry

Abstract:

This paper presents the development of 1700V-rated 4H-SiC JBS diodes in the state-of-the-art 6-inch SiC-dedicated foundry, NY-PEMC (New York- Power Electronics Manufacturing Consortium). The critical considerations in developing the SiC JBS diode including the cell optimization, edge termination design, process flow, and unit process developments are discussed in this paper. Static device performances such as forward conduction and reverse blocking behaviors of fabricated 1700V, 20A-rated JBS diode are presented.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

558-561

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.558

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Online since:

July 2019

Authors:

Nick Yun, Eric Liu, Woong Je Sung*, Anne Sophie Larrea, Daniel Franca, Thomas Gorczyca, Alexander Bialy, Wen Li Collison, Jamie Prudhomme, Pui Yee Hung, Sean Valente, Shannon Dunn, Brian Sapp, Jeffrey Hedrick

Keywords:

4H-SiC, Edge Termination, Foundry, Junction Barrier Schottky (JBS) Diode, NY-PEMC

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* - Corresponding Author

References

[1] K. Ohtsuka, Y. Matsuno, K. Kuroda, H. Sugimoto, Y. Tarui, M. Imaizumi, and T. Takami, Leakage current in Ti/4H-SiC Schottky barrier diode., Physica B: Condensed Matter, Vol. 376-377, pp.370-373, April (2006).

DOI: 10.1016/j.physb.2005.12.096

Google Scholar

[2] R. Singh, D.C. Capell, A.R. Hefner, J. Lai, and J.W. Palmour, High-power 4H-SiC JBS rectifiers., IEEE Transactions on Electron Devices, Vol. 49, No. 11, pp.2054-2063, November (2002).

DOI: 10.1109/ted.2002.804715

Google Scholar

[3] L. Zhu, T. P. Chow, K.A. Jones, and A. Agarwal, Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers., IEEE Transactions on Electron Devices, Vol. 53, No. 2, pp.363-368, February (2006).

DOI: 10.1109/ted.2005.862704

Google Scholar

[4] A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, Study of avalanche breakdown and impact ionization in 4H silicon carbide,, Journal of Electronic Materials, Vol. 27, No. 4, p.335–341, April (1998).

DOI: 10.1007/s11664-998-0411-x

Google Scholar

[5] W. Sung and B.J. Baliga, A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: the Hybrid Junction Termination Extension (Hybrid-JTE)., IEEE Electron Device Letters, Vol. 37, No. 12, p.1609 – 1612, December (2016).

DOI: 10.1109/led.2016.2623423

Google Scholar

[6] W. Sung, K. Han and B.J. Baliga, Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current,, Materials Science Forum, Vol. 924, pp.613-616, June (2018).

DOI: 10.4028/www.scientific.net/msf.924.613

Google Scholar