The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes

Yaren Huang; Jonas Buettner; Benedikt Lechner; Gerhard Wachutka

doi:10.4028/www.scientific.net/MSF.963.553

Paper Titles

Impact of Subsurface Damage on SiC Wafer Shape
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Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars
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Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes
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Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
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The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes
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On the Development of 1700V SiC JBS Diodes in a 6-Inch Foundry
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Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes
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Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes
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Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
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HomeMaterials Science ForumMaterials Science Forum Vol. 963The Impact of Non-Ideal Ohmic Contacts on the...

The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes

Abstract:

The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with serious problems, such as a shifting threshold voltage, reduced forward conductivity, and no noticeable conductivity modulation by minority carrier injection from p⁺-emitters, in matching measured data with simulation results, as a consequence of the significant impact of non-ideal poor Ohmic contacts. In this work, we used a Schottky contact model together with a barrier tunneling model, instead of common ideal Ohmic contact model, to simulate the non-ideal Ohmic contact on SiC MPS diodes. Based on this approach, the I-V characteristics of real Ohmic contacts can be reproduced in high-fidelity simulations, providing us physical insight of the observed operational behavior.

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Periodical:

Materials Science Forum (Volume 963)

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553-557

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.553

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Online since:

July 2019

Authors:

Yaren Huang*, Jonas Buettner, Benedikt Lechner, Gerhard Wachutka

Keywords:

Non-Ideal Ohmic Contact, SiC MPS Diodes

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References

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