Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

Abstract:

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

• Periodical: Materials Science Forum (Volume 963)
• Pages: 625-628
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.625
• Online since: July 2019
• Authors: Ajit Kanale*, B. Jayant Baliga, Ki Jeong Han, Subhashish Bhattacharya
• Keywords: High-Temperature Switching, JBSFET, Power MOSFET, Silicon Carbide, Third Quadrant

References

[1] B. N. Pushpakaran, A.S. Subburaj, S. B. Bayne and J. Mookken, Impact of Silicon Carbide Semiconductor technology in Photovoltaic Energy System,, Renewable and Sustainable Energy Reviews, 55 (2016), 971-989.

DOI: 10.1016/j.rser.2015.10.161

[2] S. Hayashi, T. Yamashita, J. Senzaki, M. Miyazato, M. Ryo, M. Miyajima, T. Kato, Y. Yonezawa, K. Kojima and H. Okumura, Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes,, Jpn. J. Appl. Physics, 57 (45), February 2018, pp.1-6.

DOI: 10.7567/jjap.57.04fr07

[3] S. Bontemps, A. Basler and P. Doumergue, Evaluation of the need for SiC SBD in parallel with SiC MOSFETs in a module phase leg configuration,, in Proc. PCIM Europe, July 2015, pp.1-6.

[4] W. Sung, B.J. Baliga, On Developing one-chip Integration of 1.2kV SiC MOSFET and JBS Diode (JBSFET),, in IEEE Trans. on Indus. Elec., April 2017, 64 (10), pp.8206-8212.

DOI: 10.1109/tie.2017.2696515

[5] S. Hino, H. Hatta, K. Sadamatsu, Y. Nagahisa, S. Yamamoto, T. Iwamatsu, Y. Yamamoto, M. Imaizumi, S. Nakata and S. Yamakawa, Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode, in Proc. ECSCRM 2016, pp.477-482.

DOI: 10.4028/www.scientific.net/msf.897.477

[6] B. J. Baliga, K. Han, J. Harmon, A. Tucker, S. Syed and W. Sung, PRESiCE: Process Engineered for Manufacturing SiC Electronic devices,, in Proc. ICSCRM 2017, pp.523-526.

DOI: 10.4028/www.scientific.net/msf.924.523

[7] L. Knoll, A. Mihaila, L. Kranz, M. Bellini, S. Wirths, E. Bianda, C. Papdapoulos, M. Rahimo, Dynamic Switching and short Circuit Capability of 6.5kV SiC MOSFETs,, in Proc. ISPSD 2018, pp.451-454.

DOI: 10.1109/ispsd.2018.8393700