Deep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBT

Wen Fang Du; Yao Hua Wang; Rui Jin; Kui Pu; Wen Hong Zhang; Jun Zeng; Mohamed N. Darwish; Jiang Liu; Tao Zhu

doi:10.4028/www.scientific.net/MSF.963.643

Paper Titles

Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET
p.625

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
p.629

Impact of Interface Trap Density of SiC-MOSFET in High-Temperature Environment
p.633

Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well
p.639

Deep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBT
p.643

Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO₂-SiO₂- AlN
p.647

15 kV n-GTOs in 4H-SiC
p.651

SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit
p.655

Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure
p.660

HomeMaterials Science ForumMaterials Science Forum Vol. 963Deep Trench Termination Structure with p-Type SiC...

Deep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBT

Abstract:

A 3.3 kV rated Si-SiC hybrid IGBT with Si-based active structure and Si/SiC composite junction edge termination is proposed in this paper. A single deep and wide Si trench, capped with a hetero-epitaxially grown SiC layer, is employed as the edge termination structure. Therefore, the active region can make full use of the mature Si-based IGBT processes and cell structures with high carrier channel mobility and long electron-hole lifetime. Meanwhile the edge termination benefits from the high critical electric field of SiC and its breakdown voltage can easily reach the ideal value with excellent process windows. The ruggedness and reliability of the device can also be significantly improved because the avalanche occurs inside the silicon bulk and is far from the dielectric/semiconductor interface. The excellent characteristics of the edge termination are studied in detail by simulation. It is shown that the proposed edge structure has higher reliability in terms of the hot carrier effects and much less sensitivity to the interface charges in terms of breakdown degradation.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

643-646

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.643

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Online since:

July 2019

Authors:

Wen Fang Du, Yao Hua Wang, Rui Jin, Kui Pu, Wen Hong Zhang, Jun Zeng*, Mohamed N. Darwish, Jiang Liu, Tao Zhu

Keywords:

Deep Trench, Edge Termination, Hetero-Epitaxial, Interface Charge

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