SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit

Alexander Bolotnikov; Peter A. Losee; Reza Ghandi; Stacey Kennerly; Rajib Datta; Xu She

doi:10.4028/www.scientific.net/MSF.963.655

Paper Titles

Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well
p.639

Deep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBT
p.643

Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO₂-SiO₂- AlN
p.647

15 kV n-GTOs in 4H-SiC
p.651

SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit
p.655

Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure
p.660

Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
p.666

TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors
p.670

Silicon Carbide BJT Oscillator Design Using S-Parameters
p.674

HomeMaterials Science ForumMaterials Science Forum Vol. 963SiC Charge-Balanced Devices Offering Breakthrough...

SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit

Abstract:

This work presents experimental validation of novel device design, based on charge-balance concept expected to expand SiC utilization space for industrial and transportation power conversion applications. Fabricated 2kV and 3kV SiC CB-JBS diodes have surpassed the 1-D BV versus R_On,sp tradeoff with the highest reported breakdown voltage. Static and dynamic characteristics of these new diodes are reported.