Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO2-SiO2- AlN

Siva Kotamraju; Pavan Vudumula

doi:10.4028/www.scientific.net/MSF.963.647

Paper Titles

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Deep Trench Termination Structure with p-Type SiC Layer for Improved Reliability of High Voltage IGBT
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15 kV n-GTOs in 4H-SiC
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Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
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Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO₂-SiO₂- AlN

Abstract:

We report on a novel method of stacking multiple oxide layers on 4H-SiC 20 kV IGBT. Instead of SiO₂/SiC interface which is common for any SiC based MOS device, we found that the AlN/SiC interface would yield better results. We have performed 2D numerical simulations to analyze static characteristics for three combinations of dielectric stacks on IGBT: HfO₂-SiO₂, HfO₂-AlN, and HfO₂-SiO₂-AlN (by maintaining the same equivalent oxide thickness value). In addition to higher transconductance (g_m) and lower subthreshold swing (SS), the device with AlN/SiC interface offer comparatively lower R_SP,ON and higher mobility with respect to temperature. Nevertheless, with a partial compromise on device characteristics improvement, insertion of SiO₂ in the dielectric stack helps in suppressing the subthreshold current owing to higher band offset with respect to SiC. The turn off characteristics of the device is analysed using a clamped inductive circuit. Device with AlN/SiC has shown better dI_c/dt and fall time compared to SiO₂/SiC interface.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

647-650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.647

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Online since:

July 2019

Authors:

Siva Kotamraju*, Pavan Vudumula

Keywords:

High-K Dielectric, Mobility, SiC IGBT, Specific On-Resistance (R_SP,ON)

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