Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs

Xiao Li Tian; Ben Tan; Yun Bai; Ji Long Hao; Cheng Yue Yang; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.963.666

Paper Titles

Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO₂-SiO₂- AlN
p.647

15 kV n-GTOs in 4H-SiC
p.651

SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit
p.655

Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure
p.660

Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
p.666

TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors
p.670

Silicon Carbide BJT Oscillator Design Using S-Parameters
p.674

Effect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based Simulation
p.679

Compact Modeling of SiC and GaN Junction FETs at High Temperature
p.683

HomeMaterials Science ForumMaterials Science Forum Vol. 963Simulation Study for the Structural Cell Design...

Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs

Abstract:

In this paper, the structural cell design optimization of 15kV 4H-SiC p-channel IGBT is performed. The effects of the parameters of JFET region on the blocking voltage and the forward characteristics are analyzed by numerical simulations. The results indicate that the JFET width and JFET region concentration have an important effect on the performance of IGBTs. Based on the simulation structure in this paper, the optimum JFET width is 10μm, and the optimum JFET concentration is 7×10¹⁵cm⁻³. Meanwhile, they should be carefully designed to achieve the best trade-off between the blocking voltage and the forward voltage drop.

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Periodical:

Materials Science Forum (Volume 963)

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666-669

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.666

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Online since:

July 2019

Authors:

Xiao Li Tian*, Ben Tan, Yun Bai, Ji Long Hao, Cheng Yue Yang, Xin Yu Liu

Keywords:

4H-SiC, High Voltage, IGBT, JFET Region

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References

[1] Lin Cheng, John W. Palmour, et al, Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings, Mater. Sci. Forum, (2014)778-780, 1089-1095.

DOI: 10.4028/www.scientific.net/msf.778-780.1089

Google Scholar

[2] Kenji Fukuda, Dai Okamoto, et al, Development of Ultrahigh-Voltage SiC Devices, IEEE Trans. Electron Devices, 62(2), 2015, 396-404.

Google Scholar

[3] Mrinal K. Das, Qingchun Zhang, et al, A 13 kV 4H-SiC n-channel IGBT with Low Rdiff,on and Fast Switching, Mater. Sci. Forum, (2009) 600-603, 1183-1186.

DOI: 10.4028/www.scientific.net/msf.600-603.1183

Google Scholar

[4] Tetsuya Miyazawa, Koji Nakayama, et al, Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors, Journal of Applied Physics, 118, (2015) 085702.

DOI: 10.1063/1.4929456

Google Scholar

[5] T. Hatakeyama, K. Fukuda, H. Okumura, An Investigation of Material limit Characteristics of SiC IGBTs, Mater. Sci. Forum, (2012)717-720, 1143-1146.

DOI: 10.4028/www.scientific.net/msf.717-720.1143

Google Scholar