Silicon Carbide BJT Oscillator Design Using S-Parameters

Muhammad Waqar Hussain; Hossein Elahipanah; Saul Rodriguez; B. Gunnar Malm; Ana Rusu

doi:10.4028/www.scientific.net/MSF.963.674

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Silicon Carbide BJT Oscillator Design Using...

Silicon Carbide BJT Oscillator Design Using S-Parameters

Abstract:

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

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Periodical:

Materials Science Forum (Volume 963)

Pages:

674-678

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.674

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Online since:

July 2019

Authors:

Muhammad Waqar Hussain*, Hossein Elahipanah, Saul Rodriguez, B. Gunnar Malm, Ana Rusu

Keywords:

4H-SiC BJT, RF Oscillator, S-Parameters

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References

[1] T. Feng, J. M. Salem, D. S. Ha, High temperature VCO based on GaN devices for downhole communications, in Proc. Int. Symp. Circuits Syst., (2017).

DOI: 10.1109/iscas.2017.8050448

Google Scholar

[2] Z. D. Schwartz, G. E. Ponchak, 1-GHz, 200 ⁰C, SiC MESFET Clapp oscillator, IEEE Microw. Wireless Compon. Lett. 15 (2005) 730-732.

DOI: 10.1109/lmwc.2005.858995

Google Scholar

[3] G. E. Ponchak, M. C. Scardelletti, J. L. Jordan, 30 and 90 MHz oscillators operating through 450 and 470 ⁰C for high temperature wireless sensors, Asia-Paciﬁc Microw. Conference. (2010) 1027-1030.

Google Scholar

[4] D. Brennan, K. Vassilevski, N. G. Wright, A. B. Horsfall, Direct frequency modulation of a high temperature silicon carbide oscillator, Mater. Sci. Forum. 717 (2012) 1269-1272.

DOI: 10.4028/www.scientific.net/msf.717-720.1269

Google Scholar

[5] M. W. Hussain, H. Elahipanah, J. E. Zumbro, S. Schröder, S. Rodriguez, B. G. Malm, H. A. Mantooth, A. Rusu, A 500 ⁰C active down-conversion mixer in silicon carbide bipolar technolgy, IEEE Electron Device Lett. 39 (2018) 855-858.

DOI: 10.1109/led.2018.2829628

Google Scholar

[6] G. Gonzalez, Foundations of Oscillator Circuit Design, Norwood, (2007).

Google Scholar

[7] R. W. Rhea, Discrete Oscillator Design: Linear, Nonlinear, Transient and Noise Domains, Artech House, Boston, (2010).

Google Scholar

[8] M. W. Hussain, H. Elahipanah, S. Schröder, S. Rodriguez, B. G. Malm, M. Östling, A. Rusu, An intermediate frequency amplifier for high-temperature applications, IEEE Trans. Electron Devices. 65 (2018) 1411-1418.

DOI: 10.1109/ted.2018.2804392

Google Scholar