High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani; Pascal Bevilacqua; Abderrahime Zaoui; Gregory Grosset; Dominique Planson; Hervé Morel

doi:10.4028/www.scientific.net/MSF.963.688

Paper Titles

TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors
p.670

Silicon Carbide BJT Oscillator Design Using S-Parameters
p.674

Effect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based Simulation
p.679

Compact Modeling of SiC and GaN Junction FETs at High Temperature
p.683

High-Voltage SiC-JFET Fabrication and Full Characterization
p.688

Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices
p.693

First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
p.697

Development of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid Environments
p.701

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
p.709

HomeMaterials Science ForumMaterials Science Forum Vol. 963High-Voltage SiC-JFET Fabrication and Full...

High-Voltage SiC-JFET Fabrication and Full Characterization

Abstract:

3.3 kV Power JFETs have been designed, fabricated and measured in the framework of the FilSiC project. The paper presents the main characterization results with classical static and dynamic xmeasurements as well as double pulse tests for switching characterization. The study is completed by a data-sheet evaluation for the measured components and an evaluation of the associated safe operating area.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2018

View Preview

Info:

Periodical:

Materials Science Forum (Volume 963)

Pages:

688-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.688

Citation:

Cite this paper

Online since:

July 2019

Authors:

Besar Asllani, Pascal Bevilacqua, Abderrahime Zaoui, Gregory Grosset, Dominique Planson, Hervé Morel*

Keywords:

4H-SiC JFET, Device Characterization, Device Processing, Double-Pulse Switching, High Voltage Device

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] BOLOTNIKOV, Alexander, LOSEE, Peter, MATOCHA, Kevin, et al. 3.3 kV SiC MOSFETs designed for low on-resistance and fast switching. In : Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. IEEE, 2012. pp.389-392.

DOI: 10.1109/ispsd.2012.6229103

Google Scholar

[2] YAMAMOTO, Shigehisa, NAKAO, Yukiyasu, TOMITA, Nobuyuki, et al. Development of 3.3 kV SiC-MOSFET: Suppression of forward voltage degradation of the body diode. In : Materials Science Forum. Trans Tech Publications, 2014. pp.951-954.

DOI: 10.4028/www.scientific.net/msf.778-780.951

Google Scholar

[3] BOUGHRARA, Narjes, MOUMEN, Sabrine, LEFEBVRE, Stéphane, et al. Robustness of SiC JFET in short-circuit modes. IEEE Electron device letters, 2009, vol. 30, no 1, pp.51-53.

DOI: 10.1109/led.2008.2008668

Google Scholar

[4] KRSTIC, Slobodan, WELLNER, Edward L., BENDRE, Ashish R., et al. Circuit breaker technologies for advanced ship power systems. In : Electric Ship Technologies Symposium, 2007. ESTS'07. IEEE. IEEE, 2007. pp.201-208.

DOI: 10.1109/ests.2007.372086

Google Scholar

[5] GUO, Yuan-Bo, BHAT, Krishna P., ARAVAMUDHAN, Arunkumar, et al. High current and thermal transient design of a SiC SSPC for aircraft application. In : Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE. IEEE, 2011. pp.1290-1297.

DOI: 10.1109/apec.2011.5744759

Google Scholar

[6] Deep Concept, Tarbes, France, http://www.deepconcept.fr.

Google Scholar

[7] FUNAKI, Tsuyoshi, BALDA, Juan Carlos, JUNGHANS, Jeremy, et al. Power conversion with SiC devices at extremely high ambient temperatures. IEEE Transactions on Power electronics, 2007, vol. 22, no 4, pp.1321-1329.

DOI: 10.1109/tpel.2007.900561

Google Scholar

[8] CHEN, Zheng, BOROYEVICH, Dushan, BURGOS, Rolando, et al. Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs. In : Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE. IEEE, 2009. pp.1480-1487.

DOI: 10.1109/ecce.2009.5316106

Google Scholar

[9] Hatem Garrab, B. Allard, H. Morel, kaiçar Ammous, Sami Ghedira, Adel Amimi, Kamel Besbes, Jean-Michel Guichon, « On the Extraction Procedure of PIN diode Design Parameters for validation of Integrated Power Converter Design », special issue on integrated power electronics, IEEE Trans. On Power Electronics, Vol. 20, No. 3, pp.660-670. 2005. [hal-00140858],.

DOI: 10.1109/TPEL.2005.846544

Google Scholar

[10] Infineon OptiMOS TM Power MOSFET Datasheet Explanation, Application Note AN 2012-03 V1.1 March (2012).

Google Scholar