Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices

Xiang Zhou; Zhi Bo Guo; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.963.693

Paper Titles

Silicon Carbide BJT Oscillator Design Using S-Parameters
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Effect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based Simulation
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Compact Modeling of SiC and GaN Junction FETs at High Temperature
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High-Voltage SiC-JFET Fabrication and Full Characterization
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Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices
p.693

First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
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Development of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid Environments
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Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
p.709

First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
p.714

HomeMaterials Science ForumMaterials Science Forum Vol. 963Performance Limits of Vertical 4H-SiC and 2H-GaN...

Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices

Abstract:

We have evaluated the specific on-resistance (R_on,sp) vs. BV trade-off limit of vertical superjunction (SJ) devices for 4H-SiC and 2H-GaN using a previously published analytical model. In addition, we have identified and replaced some unsuitable assumptions found in previous work. Our results show that the R_on,sp of vertical SJ devices is between one and four orders of magnitude lower than the 1D limit of 4H-SiC and 2H-GaN devices at same breakdown voltage, but significantly higher than the previous projected limit for 4H-SiC. The optimized specific on-resistance for SJ devices is lower than that for conventional devices by factors of 3X and 100X for 1kV and 10kV devices respectively. These figures are, however, 25X higher than previous projections.

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Periodical:

Materials Science Forum (Volume 963)

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693-696

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https://doi.org/10.4028/www.scientific.net/MSF.963.693

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Online since:

July 2019

Authors:

Xiang Zhou*, Zhi Bo Guo, T. Paul Chow

Keywords:

2-D Simulation, 2H-GaN, 4H-SiC, Analytical Model, Superjunction (SJ)

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