TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors

Daniel Johannesson; Muhammad Nawaz; Hans Peter Nee

doi:10.4028/www.scientific.net/MSF.963.670

Paper Titles

15 kV n-GTOs in 4H-SiC
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SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit
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Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure
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Simulation Study for the Structural Cell Design Optimization of 15kV SiC p-Channel IGBTs
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TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors
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Silicon Carbide BJT Oscillator Design Using S-Parameters
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Effect of Temperature on the Electrical Characteristics of 4H-SiC Planar n/p-Type Junctionless FET: Physics Based Simulation
p.679

Compact Modeling of SiC and GaN Junction FETs at High Temperature
p.683

High-Voltage SiC-JFET Fabrication and Full Characterization
p.688

HomeMaterials Science ForumMaterials Science Forum Vol. 963TCAD Model Calibration of High Voltage 4H-SiC...

TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors

Abstract:

In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design and device operation in electrical circuits.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

670-673

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.670

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Online since:

July 2019

Authors:

Daniel Johannesson*, Muhammad Nawaz, Hans Peter Nee

Keywords:

4H-SiC, Bipolar Junction Transistor (BJT), Modeling, Silicon Carbide, Technology Computer-Aided Design (TCAD)

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