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HomeMaterials Science ForumMaterials Science Forum Vol. 963Improvement of Switching Characteristics in 6.5-kV...

Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure

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Abstract:

6.5-kV SiC IGBT with novel drift layer structure is developed to eliminate collector voltage steepening during turn-off and thus to suppress a ringing noise. The proposed IGBT has a depletion-controlled structure (DCS) of a two-step drift layer to suppress the increase of a depletion layer during the turn-off. We fabricated n-channel SiC IGBTs with DCS designed for a blocking voltage of 6.5 kV. Also, we applied our original backside-grinding-last (BG-last) process that enables low switching loss. The DCS device successfully reduced a riging of the gate voltage and had a turn-off loss of 17.6 mJ with 3.6-kV and 32-A switching operation. Although this value is larger than that of the conventional devices (8.8 mJ) due to a tail current, it is still quite low compared with the reported switching loss of SiC IGBTs with the proper switching curves, which is estimated to be 46.1 mJ with the same rated voltage and current.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

660-665

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.660

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Online since:

July 2019

Authors:

Naoki Watanabe*, Hiroyuki Yoshimoto, Yuki Mori, Akio Shima

Keywords:

4H-SiC, IGBT, N-Channel, Turn-Off Characteristics, Ultra-High Voltage

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

[1] T. Kimoto, Jpn. J. Appl. Phys. 54 (2015) 040103.

[2] A. Itoh, T. Kimoto, and H. Matsunami, IEEE Electron Dev. Lett. 16 (1995) 280-282.

[3] K. Asano, T. Hayashi, R. Saito, and Y. Sugawara, IEEE Proc. ISPSD 2000, 97-100.

[4] R. Singh, D. C. Capell, A. R. Hefner, J. Lai, and J. W. Palmour, IEEE Trans. Electron Dev. 49 (2002) 2054-2063.

DOI: 10.1109/ted.2002.804715

[5] J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch, IEEE. Electron Dev. Lett. 18 (1997) 93-95.

[6] N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui, S. Kinouchi, M. Imaizumi, and T. Oomori, IEEE Proc. ISPSD 2006, 261-264.

[7] A. Bolotnikov, P. Losee, K. Matocha, J. Glaser, J. Nasadoski, L. Wang, A. Elasser, S. Arthur, Z. Stum, P. Sandvik, Y. Sui, T. Johnson, J. Sabate, and L. Stevanovic, IEEE Proc. ISPSD 2012, 389-392.

DOI: 10.1109/ispsd.2012.6229103

[8] Q. Zhang, C. Jonas, S. –H. Ryu, A. Agarwal, and J. Palmour, IEEE Proc. ISPSD 2006, 285-288.

[9] Y. Sui, X. Wang, and J. A. Cooper, IEEE Electron Dev. Lett. 28 (2007) 728-730.

[10] Q. Zhang, M. Das, J Sumakeris, R. Callanan and A. Agarwal, IEEE Electron Dev. Lett. 29 (2008) 1027-1029.

[11] S. Katakami, H. Fujisawa, K. Takenaka, H. Ishimori, S. Takasu, M. Okamoto, M. Arai, Y. Yonezawa, and K. Fukuda, Mater. Sci. Forum 740-742 (2013) 958-961.

DOI: 10.4028/www.scientific.net/msf.740-742.958

[12] T. Deguchi, T. Mizushima, H. Hujisawa, K Takenaka, Y. Yonezawa, K. Fukua, H. Okumura, M. Arai, A. Tanaka, S. Ogata, T. Hayashi, K. Nakayama, K. Asano, S. Matsunaga, N. Kumagai, and M. Takei, IEEE Proc. ISPSD 2014, 261-264.

DOI: 10.1109/ispsd.2014.6856026

[13] X. Wang and J. A. Cooper, IEEE Trans. Electron Dev. 57 (2010) 511-515.

[14] Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, S. Harada, Y. Tanaka, M. Okamoto, M. Sometani, D. Okamoto, N. Kumagai, S. Matsunaga, T. Deguchi, M. Arai, T. Hatakeyama, Y. Makifuchi, T. Araoka, N. Oose, T. Tsutsumi, M. Yoshikawa, K. Tatera, M. Harashima, Y. Sano, E. Morisaki, M. Takei, M. Miyajima, H. Kimura, A. Otsuki, K. Fukuda, H. Okumura, and T. Kimoto, IEEE Proc. IEDM 2013, 6.6.1-6.6.4.

DOI: 10.1109/iedm.2013.6724576

[15] S. Ryu, C. Capell, C. Jonas, M. O'Loughlin, J. Clayton, E. Van Brunt, K. Lam, J. Richmond, A. Kadavelugu, S. Bhattacharya, A. Burk, A. Agarwal. D. Grider, S. Allen, and J. Palmour, Mater. Sci. Forum 778-780 (2014) 1030-1033.

DOI: 10.4028/www.scientific.net/msf.778-780.1030

[16] E. V. Brunt, L. Cheng, M. O'Loughlin, C. Capell, C. Jonas, K. Lam, J. Richmond, V. Pala, S. Ryu, S. T. Allen, A. A. Burk, J. W. Palmour, and C. Scozzie, IEEE Proc. ISPSD 2014, 358-361.

DOI: 10.1109/ispsd.2014.6856050

[17] E. Van Brunt, L. Cheng, M. J. O'Loughlin, J. Richmond, V. Pala, J. Palmour, C. W. Tipton and C. Scozzie, Mater. Sci. Forum 821-823 (2015) 847-850.

DOI: 10.4028/www.scientific.net/msf.821-823.847

[18] Y. Sui, G. G. Walden, X. Wang, and J. A. Cooper, Mater. Sci. Forum 527-529 (2006) 1449-1452.

[19] N. Watanabe, H. Yoshimoto, A. Shima, R. Yamada, and Y. Shimamoto, Mater. Sci. Forum 858 (2016) 939-944.

[20] Y. Bu, H. Yoshimoto, N. Watanabe, and A. Shima, J. App. Phys. 122, 244504 (2017).

[21] N Watanabe, H. Yoshimoto, A. Shima, Matr. Sci. Forum 924 (2018) 637-640.

[22] G. Wang, A. Q. Huang, F. Wang, X. Song, X. Ni, S. Ryu, D. Grider, M. Schupbach, J. Palmour, Proc. ISPSD 2015, 229-232.

[23] T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, S. Harada, Y. Tanaka, M. Okamoto, M. Sometani, D. Okamoto, N. Kumagai, S. Matsunaga, T. Deguchi, M. Arai, T. Hatakeyama, Y. Makifuchi, T. Araoka, N. Oose, T. Tsutsumi, M. Yoshikawa, K. Tatera, A. Tanaka, S. Ogata, K. Nakayama, T. Hayashi, K. Asano, M. Harashima, Y. Sano, E. Morisaki, M. Takei, M. Miyajima, H. Kimura, A. Otsuki, Y. Yonezawa, K. Fukuda, H. Okumura, and T. Kimoto, Proc. ISPSD 2014, 277-280.

DOI: 10.1109/ispsd.2014.6856030