Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

A. Benjamin Renz; Vishal Ajit Shah; Oliver James Vavasour; Yeganeh Bonyadi; G.W.C. Baker; Fan Li; Tian Xiang Dai; Marc Walker; Philip  Andrew Mawby; Peter Michael Gammon

doi:10.4028/www.scientific.net/MSF.963.511

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Surface Effects of Passivation within Mo/4H-SiC...

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

Abstract:

Passivation treatments applied prior to Mo metallisation on Silicon Carbide (SiC) Schottky rectifier and metal-oxide-semiconductor capacitor (MOSCAP) structures are studied. A control sample and two treatments, comprising of an O₂ oxidation and a phosphorus pentoxide (P₂O₅) deposition, were studied. Electrical characterisation results show that P₂O₅ treatment improves the homogeneity of the diodes, with the ideality factor reducing to 1.02 and the leakage current reducing by three orders of magnitude to 2×10^-5 A/cm². Furthermore, the SBH was lowered by 0.11 eV and the variance of all the P₂O₅ treated Schottky characteristics over the batch reduced. Characterisation by X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry, the Si:C ratio, of the SiC below the contact increased from 0.93:1 before treatment to 0.97:1 after P₂O₅treatment.

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Materials Science Forum (Volume 963)

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511-515

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.511

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Online since:

July 2019

Authors:

A. Benjamin Renz*, Vishal Ajit Shah, Oliver James Vavasour, Yeganeh Bonyadi, G.W.C. Baker, Fan Li, Tian Xiang Dai, Marc Walker, Philip Andrew Mawby, Peter Michael Gammon

Keywords:

4H-SiC, MOSCAP, P₂O₅, Phosphorus Pentoxide, Schottky Barrier Diode, Surface Passivation

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