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Optical Transmission of p-Type a-Si:H Thin Film Deposited by PECVD on ITO-Coated Glass

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Abstract:

A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm2 and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si: H film was 150 nm. The Transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed - scale around the related band gap area that one may find an exciton structure.

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Periodical:

Materials Science Forum (Volume 966)

Pages:

72-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.966.72

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Online since:

August 2019

Authors:

Soni Prayogi, Malik Anjelh Baqiya, Yoyok Cahyono, Darminto Darminto*

Keywords:

Energy Gap, Exciton, Optical Transmission, p-Type a-Si:H

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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