Optical Transmission of p-Type a-Si:H Thin Film Deposited by PECVD on ITO-Coated Glass

Abstract:

A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm² and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si: H film was 150 nm. The Transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed - scale around the related band gap area that one may find an exciton structure.

• Periodical: Materials Science Forum (Volume 966)
• Pages: 72-76
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.966.72
• Online since: August 2019
• Authors: Soni Prayogi, Malik Anjelh Baqiya, Yoyok Cahyono, Darminto Darminto*
• Keywords: Energy Gap, Exciton, Optical Transmission, p-Type a-Si:H

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