Influence of Annealing on the Electrophysical Properties of Copper Oxide (II) Thin Film, Prepared by Sol-Gel Method

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This article discusses the effect of annealing time at temperatures of 400 and 500 ° C on the electrophysical properties of CuO films prepared by the sol-gel method based on isopropyl alcohol, copper acetate and diethylamine. The film thickness was 440 nm. Phase composition, electrical resistance, conductivity type, optical properties of films are determined.

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48-52

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February 2020

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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