Annealing Effect on the Composition and Electrophysical Properties of N-Type Silicon Surface

Kantemir Bzhikhatlov; Valeriy Luev

doi:10.4028/www.scientific.net/NHC.28.53

Paper Titles

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Morphology and Composition of Lead-Cadmium Sulfide Photo-Sensitive Films
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Influence of Annealing on the Electrophysical Properties of Copper Oxide (II) Thin Film, Prepared by Sol-Gel Method
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The Effect of Aluminum Dopant Amount in Titania Film on the Memristor Electrical Properties
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PZT Thin Films on Silicon Substrates: Formation and Research of Properties
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Electrophysical Properties of Metal Oxide Films Fabricated by Using Spray Pyrolysis
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Study of Structure and Composition of Lead Sulfide Nanostructured Films Doped by Cadmium and Iodine Ions
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HomeNano Hybrids and CompositesNano Hybrids and Composites Vol. 28Annealing Effect on the Composition and...

Annealing Effect on the Composition and Electrophysical Properties of N-Type Silicon Surface

Abstract:

During low-temperature annealing, the segregation of the alloying element leads to a strong enrichment of the surface layer, causing a rearrangement of the surface electron structure. This change in the electron structure is manifested in the characteristic energy loss spectra. Annealing of single crystals at 400–500 K leads to an increase in the density of surface electron states. As shown by the calculations of the surface potential using experimental data on the temperature dependence of the surface concentration, dopant segregation causes a linear increase in the surface potential.

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Periodical:

Nano Hybrids and Composites (Volume 28)

Pages:

53-58

DOI:

https://doi.org/10.4028/www.scientific.net/NHC.28.53

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Online since:

February 2020

Authors:

Kantemir Bzhikhatlov*, Valeriy Luev

Keywords:

Alloying Element, Annealing, Atomic Force Microscopy (AFM), Auger Electron Spectroscopy (AES), Characteristic Energy Loss, Segregation, Surface Concentration, Surface Layer, Surface Potential

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References

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