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Paper Titles
Foreword
Elaboration and n-Type Doping of GaAlAs Epitaxial Layers
p.1
Band Structure of the GaAs/AlAs Solid Solutions
p.25
Optically-Detected Magnetic Resonance of Si-Doped GaAlAs
p.53
Photo-Hall Characterization in GaAlAs
p.65
Thermal Emission Processes from DX Centers
p.73
Carrier Capture Processes at DX Centers
p.99
Studies of the DX Center Using Hydrostatic Pressure
p.121
Radiative Recombination in GaxAl1-xAs
p.145

Optically-Detected Magnetic Resonance of Si-Doped GaAlAs

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Periodical:

Solid State Phenomena (Volume 10)

Pages:

53-64

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.10.53

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Online since:

January 1990

Authors:

T.A. Kennedy, E. Glaser

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© 1990 Trans Tech Publications Ltd. All Rights Reserved

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