For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Band Structure of the GaAs/AlAs Solid Solutions
p.25
Optically-Detected Magnetic Resonance of Si-Doped GaAlAs
p.53
Photo-Hall Characterization in GaAlAs
p.65
Thermal Emission Processes from DX Centers
p.73
Carrier Capture Processes at DX Centers
p.99
Studies of the DX Center Using Hydrostatic Pressure
p.121
Radiative Recombination in GaxAl1-xAs
p.145
Mössbauer Spectroscopy Studies of the DX Center
p.163
Electron Paramagnetic Resonance Studies of the DX Center in GaAlAs
p.181

Carrier Capture Processes at DX Centers

Article Preview

Abstract:

You might also be interested in these eBooks
Physics of DX Centers in GaAs Alloys View Preview

Info:

Periodical:

Solid State Phenomena (Volume 10)

Pages:

99-120

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.10.99

Citation:

Cite this paper

Online since:

January 1990

Authors:

E. Munoz, Enrique Calleja

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1990 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.