Paper Titles

Elaboration and n-Type Doping of GaAlAs Epitaxial Layers
p.1

Band Structure of the GaAs/AlAs Solid Solutions
p.25

Optically-Detected Magnetic Resonance of Si-Doped GaAlAs
p.53

Photo-Hall Characterization in GaAlAs
p.65

Thermal Emission Processes from DX Centers
p.73

Carrier Capture Processes at DX Centers
p.99

Studies of the DX Center Using Hydrostatic Pressure
p.121

Radiative Recombination in Ga_xAl_1-xAs
p.145

HomeSolid State PhenomenaSolid State Phenomena Vol. 10Photo-Hall Characterization in GaAlAs

Photo-Hall Characterization in GaAlAs

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Physics of DX Centers in GaAs Alloys

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Periodical:

Solid State Phenomena (Volume 10)

Pages:

65-72

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.10.65

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Online since:

January 1990

Authors:

M. Mizuta

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© 1990 Trans Tech Publications Ltd. All Rights Reserved

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