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Review on the Production and Synthesis of Nanosized SnO2

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Abstract:

Tin dioxide is a wide band semiconductor, with interesting chemical physical and mechanical properties, used in a variety of industrial, domestic, medical and agricultural applications, including gas detectors, transparent conductors, solar cells, anti-static films, nanoelectronic devices etc. The variety of nanosized SnO2 production methods in the form of powders or layers (e.g. solid state, sol-gel, sputtering, laser ablation, template, solution precipitation, precursor oxidation, CVD, PVD, etc) are discussed.

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Periodical:

Solid State Phenomena (Volume 106)

Pages:

57-62

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.106.57

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Online since:

September 2005

Authors:

S. Papargyri, D.N. Tsipas, D.A. Papargyris, A.I. Botis, Athanasios D. Papargyris

Keywords:

Nanomaterial, Semiconducting Materials, SnO2, Synthesis, TiN Dioxide

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] M. Zheng et al: Chem. Mater. Vol 13, 11(2001), p.3859.

Google Scholar

[2] M.S. Arnold, P. Avouris , Z.W. Pan, Z.L. Wang, J. Phys. Chem. B. (Comm. ), 107, 3, (2003) pp.659-663.

Google Scholar

[3] S. Iijima.: Nature 354 (1991), p.56.

Google Scholar

[4] . Z.W. Pan, Z.R. Dai and Z.L. Wang. Science 291 (2001), p. (1947).

Google Scholar

[5] . Seeger, P.K. Redlich and M. Rühle,: Adv. Mater. 12 (2000), p.279.

Google Scholar

[6] D. P. Yu, C. S. Lee, I. Bello, X. S. Sun, Y. H. Tang, G. W. Zhou, Z. G. Bai, Z. Zhang and S. Q. Feng, Solid Sate Commun, 105, 6, (1998), pp.403-407.

Google Scholar

[7] .J.D. Holmes, K.P. Johnston, R.C. Doty and B.A. Korgel : Science, 87 (2000), p.1471.

Google Scholar

[8] A.M. Morales and C.M. Lieber: Science, 279 (1998), p.208.

Google Scholar

[9] O.C. Monteiro and T. Trindade: J. Mater. Sci. Lett. 19 (2000), p.859.

Google Scholar

[10] M. Nagano: J. Crystal Growth 66 (1984), p.377.

Google Scholar

[11] V. Demarne and A. Grisel : Sensors and Actuators, B 15-16 (1993), p.63.

Google Scholar

[12] G. Micocci, A. Serra, P. Siciliano, A. Tepore and Z. Ali-Adib, : Vacuum 47 (1996), p.1175.

DOI: 10.1016/0042-207x(96)00157-1

Google Scholar

[13] T.W. Capehart and S.C. Chang : J. Vac. Sci. Technol. 18 (1981), p.393.

Google Scholar

[14] L. Bruno, C. Pijolat and R. Lalauze: Sensors and Actuators, B 18-19 (1994), p.195.

Google Scholar

[15] Y. Liu, W. Zhu, O.K. Tan, X. Yao and Y. Shen: J. Mater. Sci: Mater. Electron. 7 (1996), p.279.

Google Scholar

[16] .F. Li , J. Xu, X. Yu, L. Chen, J. Zhu, Z. Yang and X. Xin, : Sensors and Actuators B: Chemical, 81, 2-3, (2002) pp.165-169.

Google Scholar