Formation and Characteristics of the Low Dielectric Carbon Doped Silicon Oxide Thin Film Deposited by MTMS/O2 – ICPCVD

Chang Sil Yang; Heon Ju  Lee; Chi Kyu Choi

doi:10.4028/www.scientific.net/SSP.107.103

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HomeSolid State PhenomenaSolid State Phenomena Vol. 107Formation and Characteristics of the Low...

Formation and Characteristics of the Low Dielectric Carbon Doped Silicon Oxide Thin Film Deposited by MTMS/O₂ – ICPCVD

Abstract:

Carbon doped silicon oxide (SiOC(-H)) films with low dielectric constant were deposited on a p-type Si(100) substrate using inductively coupled plasma chemical vapor deposition with a methyltrimethoxysilane (MTMS : CH3Si(OCH3)3) precursor and oxygen gases. The dielectric constant of the SiOC(-H) composite film depends on the relative carbon concentration and the content of the ring link mode in SiOC(-H) bonding structure. The elastic modulus and the dielectric constant decreased by the annealing process. The lowest dielectric constant of an annealed film at 400 °C was about 2.25, which was deposited with [MTMS/(MTMS+O2)]×100 flow ratio of 100%.