Monte Carlo Simulation of Projection Electron Beam Lithography

Abstract:

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We have calculated angular and energy loss distributions of electrons transmitted through masks for electron projection lithography by using a Monte Carlo simulation method. The angular and energy loss distributions are much wider in the mask stack than those in the membrane layer. The large non-scattering and non-energy-loss probabilities are also found for the membrane layer. High contrast image can thus be achieved within a small size of aperture.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

1097-1102

DOI:

10.4028/www.scientific.net/SSP.121-123.1097

Citation:

X. Sun et al., "Monte Carlo Simulation of Projection Electron Beam Lithography", Solid State Phenomena, Vols. 121-123, pp. 1097-1102, 2007

Online since:

March 2007

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Price:

$35.00

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