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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Monte Carlo Simulation of Projection Electron Beam...

Monte Carlo Simulation of Projection Electron Beam Lithography

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Abstract:

We have calculated angular and energy loss distributions of electrons transmitted through masks for electron projection lithography by using a Monte Carlo simulation method. The angular and energy loss distributions are much wider in the mask stack than those in the membrane layer. The large non-scattering and non-energy-loss probabilities are also found for the membrane layer. High contrast image can thus be achieved within a small size of aperture.

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

1097-1102

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.1097

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Online since:

March 2007

Authors:

X. Sun, P. Xiao, Z.J. Ding

Keywords:

Contrast, Electron Scattering, Lithography, Monte-Carlo Simulation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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