Monte Carlo Simulation of Projection Electron Beam Lithography
We have calculated angular and energy loss distributions of electrons transmitted through masks for electron projection lithography by using a Monte Carlo simulation method. The angular and energy loss distributions are much wider in the mask stack than those in the membrane layer. The large non-scattering and non-energy-loss probabilities are also found for the membrane layer. High contrast image can thus be achieved within a small size of aperture.
Chunli BAI, Sishen XIE, Xing ZHU
X. Sun et al., "Monte Carlo Simulation of Projection Electron Beam Lithography", Solid State Phenomena, Vols. 121-123, pp. 1097-1102, 2007