Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots
Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.
Chunli BAI, Sishen XIE, Xing ZHU
J. Xu et al., "Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots", Solid State Phenomena, Vols. 121-123, pp. 557-560, 2007