Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

J. Xu; Katsunori Makihara; Hidenori Deki; Yoshihiro Kawaguchi; Hideki Murakami; Seiichiro Higashi; Seiichi Miyazaki

doi:10.4028/www.scientific.net/SSP.121-123.557

Paper Titles

Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy
p.541

Gate-Controlled Tomonaga-Luttinger Liquid and Atomic-Like Behaviors in Peapod Quantum Dots
p.545

Small-Signal Circuit Elements of MIS-Type Nanostructures
p.549

Efficient Design of QCA Adder Structures
p.553

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots
p.557

A Comb Driving Magnetometer Based on Tunnel Effect
p.561

Novel Exclusive-OR Gate and Full Adders Implementation Using Quantum Cellular Automata
p.565

A Novel Method to Prepare Nano-Structured Semi-Conducting Polythiophenes by Supercritical Process
p.571

Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model
p.575

HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Light Emitting Diode with MOS Structures...

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

Abstract:

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

557-560

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.557

Citation:

Cite this paper

Online since:

March 2007

Authors:

J. Xu, Katsunori Makihara, Hidenori Deki, Yoshihiro Kawaguchi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

Keywords:

Doping, Light Emitting Diode (LED), Si Quantum Dots

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D. J. Lockwood and L. Pavesi, Topics Appl. Phys. Vol. 94 (2004), p.1.

Google Scholar

[2] J. De. la Torre, A. Souifi, M. Lemiti, A. Poncet, C. Busseret, G. Guillot, G. Bremond, O. Gonzalez, B. Garrido, J. R. Morante, Phyica E Vol. 17 (2003), p.604.

DOI: 10.1016/s1386-9477(02)00883-4

Google Scholar

[3] Z. Gaburro, G. Pucker, P. Bellutti, L. Pavesi, Solid State Communications Vol. 114 (2000), p.33.

DOI: 10.1016/s0038-1098(99)00578-5

Google Scholar

[4] M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, S. Hayashi, Appl. Phys. Lett. Vol. 85 (2004), p.1158.

Google Scholar

[5] M. Sopinskyy, V. Khomchenko, Current Opinion in Solid State and Mater. Sci. Vol. 7 (2003), p.97.

Google Scholar

[6] K. Makihara, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, Digest of Papers of Int. Microprocesses and Nanotechnology Conf. (Osaka, 2004)�p.216.

Google Scholar

[7] K. Shiba, K. Nakagawa, M. Ikeda, A. Kohno, S. Miyazaki, M. Hirose, Jpn. J. Appl. Phys. Vol. 36 (1997), p.234.

Google Scholar

[8] Y. Hirano, F. Sato, S. Aihara, N. Saito, S. Miyazaki, M. Hirose, Appl. Phys. Lett. Vol. 79 (2001), p.2255.

Google Scholar

[9] N. Asli, M. I. Vexler, A. F. Shulekin, P. D. Yoder, I. V. Grekhor, P. Seegebrecht, Microelectronics Relability Vol. 41 (2001), p.1071.

DOI: 10.1016/s0026-2714(01)00079-8

Google Scholar