Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model

Abstract:

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Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

575-578

DOI:

10.4028/www.scientific.net/SSP.121-123.575

Citation:

X. Wang et al., "Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model", Solid State Phenomena, Vols. 121-123, pp. 575-578, 2007

Online since:

March 2007

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Price:

$35.00

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