GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes

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Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

587-590

DOI:

10.4028/www.scientific.net/SSP.121-123.587

Citation:

G.M. Wu et al., "GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes", Solid State Phenomena, Vols. 121-123, pp. 587-590, 2007

Online since:

March 2007

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