GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes

G.M. Wu; C.F. Tsai; C.F. Shih; N.C. Chen; W.H. Feng

doi:10.4028/www.scientific.net/SSP.121-123.587

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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123GaN/Si(111) Epilayer Based on Low Temperature Al/N...

GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

587-590

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.587

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Online since:

March 2007

Authors:

G.M. Wu, C.F. Tsai, C.F. Shih, N.C. Chen, W.H. Feng

Keywords:

Composite Buffer Layer, Light Emitting Diode (LED), Nanophotonic Device

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