Characterization of Solid Tin Target for Gas Discharges Produced EUV Plasmas

Article Preview

Abstract:

In the development of our Z-pinch plasma EUV source, xenon (Xe) is used for the background gas discharges, and a solid tin (Sn) rod is used as target material due to its potential of high convention efficiency (CE) from input electric energy to EUV radiation [1, 2]. The Z-pinch plasma was driven by pulsed current with amplitude of 30 kA and pulse duration of 110 ns. Pinhole imaging, EUV spectrograph and in-band EUV energy monitor were used to characterize the EUV emission from the Z-pinch discharge. The experimental analyses have demonstrated the CE was as high as 3% [3].

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

885-888

Citation:

Online since:

March 2007

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Gerard O'Sullivan, EUVL Source Workshop, Antwerp 2003; available at www. sematech. org.

Google Scholar

[2] Zeljko Andreic et al., Performance of the 13. 5 nm PVC Capillary Discharge EUV Source, Physics Letter A, 335 (2005) 430-434.

DOI: 10.1016/j.physleta.2004.12.061

Google Scholar

[3] H. Horita, A. Kimura, H. Imamura, C.H. Zhang, S. Katsuki, T. namihira and H. Akiyama, Characteristic of Z-pinch EUV Source with Tin Target , Proc. Of the 3rd EUVL Symposium, Miyazaki, Japan, Nov. 1-4, (2004).

Google Scholar

[4] Richard H. Stulen and Donald W. Sweeney, Extreme Ultraviolet Lithography, IEEE Journal of Quantum Electronics, Vol. 35, No. 5, pp.694-699, May (1999).

DOI: 10.1109/3.760315

Google Scholar

[5] William T. Silfvast, Intense EUV Incoherent Plasma Sources for EUV Lithography and Other Applications, IEEE Journal of Quantum Electronics, Vol. 35, No. 5, pp.700-708, May (1999).

DOI: 10.1109/3.760316

Google Scholar

[6] K. Bergmann, O. Rosier, R. Lebert, W. Neff and R. Poprawe, A Multi-kilohertz Pinch Plasma Radition Source for EUVL, Microelectronic Engineering, 57-58, pp.71-77, (2001).

DOI: 10.1016/s0167-9317(01)00437-3

Google Scholar

[7] S. Katsuki, A. Kimura, A. Hongo, T. Sakugawa, H. Akiyama, Z-pinch EUV Source Driven by 100 ns Current Pulses, 2nd EUVL Symposium, Antwerp, Belgium, 09/30~10/1, (2003).

Google Scholar

[8] E.R. Kieft, J. van der Mullen and G.M.W. Kroesen, Time-resolved pinhole camera imaging and extreme ultraviolet spectrometry on a hollow cathode discharge in xenon, Physical Review E, 68, 056403, (2003).

DOI: 10.1103/physreve.68.056403

Google Scholar

[9] W. Neff et al., Pinch Plasma Radiation Sources for the Extreme Ultraviolet, Contrib. Palsma Phys., 41 (2001) 6, 589-597.

DOI: 10.1002/1521-3986(200111)41:6<589::aid-ctpp589>3.0.co;2-z

Google Scholar

[10] H. Legall et al., Spatial and Spectral Characterization of a Laser Produced Plasma Source for Extreme Ultraviolet Metrology, Review of Scientific Instruments, Vol. 75, No. 11, pp.4981-4988, (2004).

DOI: 10.1063/1.1807567

Google Scholar

[11] Winnie Svendsen and Gerard O'Sullivan, Statistics and characteristics of xuv transition arrays from laser-produced plasmas of the elements tin through iodine, Phys. Rev. A 50, 3710, (1994).

DOI: 10.1103/physreva.50.3710

Google Scholar