Elastic and Piezoelectric Characteristics of Wurtzite GaN/AlN Semiconductor Quantum Dots

Abstract:

Article Preview

The elastic deformation and piezoelectric field in GaN /AlN/ quantum dots have been investigated. The electronic levels of quantum dots have been given in this paper. The 3D strain field and piezoelectric potential are calculated based on and the effective mass theory and finite element method. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. The ground bound state and the several lowest excited states of quantum dots have been studied. It is found that the size of quantum dots controls the conduction band edge, electronic levels and more other optical properties. The calculation results are very helpful in designing high quality infrared photodetector and laser.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

913-916

DOI:

10.4028/www.scientific.net/SSP.121-123.913

Citation:

L. Cai and Y. W. Lu, "Elastic and Piezoelectric Characteristics of Wurtzite GaN/AlN Semiconductor Quantum Dots", Solid State Phenomena, Vols. 121-123, pp. 913-916, 2007

Online since:

March 2007

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.