In₂O₃ Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture

Abstract:

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 1597-1600
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.1597
• Online since: June 2007
• Authors: Hyoun Woo Kim, Sun Keun Hwang, Won Seung Cho, Tae Gyung Ko, Seung Yong Choi, Wan In Lee, Sang Eon Park, Jung Hoon Joo, Dong Ik Kim, Seong Gyoon Kim, Byung Hak Choe, Seok Hong Min, Jae Ho Choi
• Keywords: Indium Oxide, TiAlN

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