In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture

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This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

1597-1600

DOI:

10.4028/www.scientific.net/SSP.124-126.1597

Citation:

H. W. Kim et al., "In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture", Solid State Phenomena, Vols. 124-126, pp. 1597-1600, 2007

Online since:

June 2007

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$35.00

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