Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

Jae Bon Koo; Jung Wook Lim; Chan Hoe Ku; Sang Chul Lim; Jung Hun Lee; Seong Hyun Kim; Sun Jin Yun; Yong Suk Yang; Kyung Soo Suh

doi:10.4028/www.scientific.net/SSP.124-126.383

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Pentacene Organic Thin-Film Transistors with...

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

Abstract:

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

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Solid State Phenomena (Volumes 124-126)

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383-386

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.383

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Online since:

June 2007

Authors:

Jae Bon Koo, Jung Wook Lim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Seong Hyun Kim, Sun Jin Yun, Yong Suk Yang, Kyung Soo Suh

Keywords:

Al₂O₃, Dual-Gate, Organic Thin-Film Transistor, Pentacene, Threshold Voltage

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