Electrical, optical, and structural properties of amorphous indium zinc oxide (IZO) anode films grown on flexible polycarbonate (PC) substrate were investigated. The x-ray diffraction (XRD) result shows that the IZO film grown at room temperature is complete amorphous structure due to low substrate temperature. A sheet resistance of 34.1 ,/, average transmittance above 88.9% in visible range, and root mean spare roughness of 3.5~10.5 Å were obtained even in the amorphous IZO anode film grown on PC substrate at room temperature. It is shown that the Ir(ppy)3 doped-flexible organic light emitting diode (OLED) fabricated on the amorphous IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film is a promising anode material for the fabrication of flexible OLEDs.