Formation and Optical Properties of ZnSe Self-Assembled Quantum Dots in Cl-Doped ZnSe Thin Films Grown on GaAs (100) Substrates

Abstract:

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The high-resolution scanning electron microscopy (HRSEM) image showed that selfassembled ZnSe small quantum dots (QDs) and large nanodots with a pyramid shape were formed in the Cl-doped ZnSe epilayers grown on GaAs (100) substrates. The formation of the ZnSe QDs was attributed to three-dimensional growth controlled by distribution of the impurities in the Cldoped ZnSe epilayrs. Cathodoluminescence (CL) measurements at room temperature revealed the emission peak at 3.1 eV corresponding to the blue shift approximately 400 meV from the near band edge emission of 2.7 eV in the bulk ZnSe. The blue shifted CL peak indicates the quantum confinement effect resulting from the formation of the ZnSe QDs in the Cl-doped ZnSe thin film. While the peak position of the donor-acceptor pair emission shifted to higher energies with decreasing temperature, the band-edge emission peak for the QDs did not significantly change.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

567-570

DOI:

10.4028/www.scientific.net/SSP.124-126.567

Citation:

G.N. Panin et al., "Formation and Optical Properties of ZnSe Self-Assembled Quantum Dots in Cl-Doped ZnSe Thin Films Grown on GaAs (100) Substrates", Solid State Phenomena, Vols. 124-126, pp. 567-570, 2007

Online since:

June 2007

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$35.00

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