The Calculation of Adatom Diffusion Process on Si and Ge Surfaces from First-Principles

Ki Seok Chang; Young Gui Yoon

doi:10.4028/www.scientific.net/SSP.124-126.551

Paper Titles

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Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at
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Numerical Analysis of Self-Organizing Interconnection Process by 3 Dimensional Flow Dynamics
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Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)
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The Calculation of Adatom Diffusion Process on Si and Ge Surfaces from First-Principles
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Synthesis of ZnO Flower-Like Nanostructures on GaN Epitaxial Layer by Hydrothermal Process
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Fabrication of Antireflective Films Composed of High and Low Refractive Index Layers Using Layer-by-Layer Self-Assembly Method
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Synthesis and Characterization of TMA-A Zeolite Nanocrystals
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Formation and Optical Properties of ZnSe Self-Assembled Quantum Dots in Cl-Doped ZnSe Thin Films Grown on GaAs (100) Substrates
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The Calculation of Adatom Diffusion Process on Si and Ge Surfaces from First-Principles

Abstract:

We study Si adatom diffusion process near Si/Ge stepped surfaces from first-principles. Dependence of surface growth morphology on growing conditions such as temperature is not clearly understood. We calculate Ehrlich-Schwoebel(ES) barrier of stepped surfaces from first-principles and analyze adatom diffusion process to understand growth mechanism of the surfaces. The configuration of the surfaces with ES barrier would play a key role in the diffusion process because it controls hopping rates in the presence of step edges. Our results are likely to help correctly access the adatom diffusion process on the surfaces.