Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)

Abstract:

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We present the linear stability analysis for the epitaxial thin film growth on the vicinal surface of strained Si and the growth mode diagrams of the epitaxial growth under various operation conditions. Competition between step-step elastic interactions and the asymmetry of incorporation of adatoms from the terraces to step edge is considered. Force monopoles at steps and their interaction lead to it on the vicinal surface while kinetic asymmetry of the adatom incorporation at steps due to Ehrlich-Schwoebel barrier prevents the step bunching instability. Growth mode on the vicinal surface is determined by the competition between elastic step-step interactions and Ehrlich-Schwoebel barrier.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

547-550

DOI:

10.4028/www.scientific.net/SSP.124-126.547

Citation:

P. R. Cha "Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)", Solid State Phenomena, Vols. 124-126, pp. 547-550, 2007

Online since:

June 2007

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$35.00

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