Grain Boundaries in Multicrystalline Si

Abstract:

We report the electrical, structural and mechanical properties of grain boundaries (GBs) in multicrystalline Si (mc-Si) based on electron-beam-induced current (EBIC), transmission electron microscope (TEM), and scanning infrared polariscope (SIRP) characterizations. The recombination activities of GBs are clearly classified with respect to GB character and Fe contamination level. The decoration of Fe impurity at boundary has been approved by annular dark field (ADF) imaging in TEM. Finally, the distribution of residual strain around GBs, and the correlations between strain and electrical properties are discussed.

• Periodical: Solid State Phenomena (Volumes 156-158)
• Pages: 19-26
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.156-158.19
• Online since: October 2009
• Authors: Jun Chen, Bin Chen, Woong Lee, Masayuki Fukuzawa, Masayoshi Yamada, Takashi Sekiguchi
• Keywords: EBIC, Grain Boundary, Multicrystalline Silicon

References

[1] K. Yang, G. H. Schwuttke and T. F. Ciszek: J. Cryst. Growth 50 (1980) p.301.

[2] A. Bary and G. Nouet: J. Appl. Phys. 63 (1988) p.435.

[3] J. L. Maurice and C. Colliex: Appl. Phys. Lett. 55 (1989) 241.

[4] R. Rizk, A. Ihlal and X. Portier: J. Appl. Phys. 77(1995) p.1875.

[5] M. Kittler, W. Seifert, M. Stemmer and J. Palm: J. Appl. Phys. 77 (1995) p.3725.

[6] Z. J. Wang, S. Tsurekawa, K. Ikeda, T. Sekiguchi and T. Watanabe: Interface Sci. 7 (1999) p.197.

[7] M. Fukuzawa and M. Yamada: Materials Science in Semiconductor Processing 9 (2006) p.266.

[8] M. Becker, H. Scheel, S. Christiansen and H. P. Strunk: J. Appl. Phys. 101 (2007) p.063531.

[9] J. Chen, T. Sekiguchi, S. Nara and D. Yang: J. Phys.: Condens. Matter 16 (2004) p. S211.

[10] J. Chen, T. Sekiguchi, D. Yang, F. Yin, K. Kido and S. Tsurekawa: J. Appl. Phys. 96 (2004) p.5490.

[11] J. Chen, D. Yang, Z. Xi and T. Sekiguchi: J. Appl. Phys. 97 (2005) p.033701.

[12] T. Buonassisi, A.A. Istratov, M.D. Pickett, M.A. Marcus, T.F. Ciszek and E.R. Weber: Appl. Phys. Lett. 89 (2006) p.042102.

DOI: 10.1063/1.2234570

[13] J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito and F. Yin: Scripta Materialia 52 (2005) p.1211.

DOI: 10.1016/j.scriptamat.2005.03.010

[14] J. Chen and T. Sekiguchi: Jpn. J. Appl. Phys. 46 (2007) p.6489.

[15] W. Lee, J. Chen, B. Chen, J. Chang and T. Sekiguchi: Appl. Phys. Lett. 94 (2009) p.112103.

[16] S. He, S. Danyluk, I. Tarasov and S. Ostapenko: Appl. Phys. Lett. 89 (2006) p.111909.

[17] M. Yamada: Rev. Sci. Instrum. 64 (1993) p.1815.

[18] J. Chen, B. Chen, T. Sekiguchi, M. Fukuzawa and M. Yamada: Appl. Phys. Lett. 93 (2008) p.112105.

[19] S. Nara, T. Sekiguchi and J. Chen: Eur. Phys. J. Appl. Phys. 27 (2004) p.389.

[20] T. Sekiguchi and K. Sumino: Rev. Sci. Instrum. 66 (1995) p.4277.

[21] A. A. Istratov, H. Hieslmair and E. R. Weber: Appl. Phys. A 69 (1999) p.13.

[22] W. Shockley and W. T. Read: Phys. Rev. 87 (1952) p.835.

[23] B. Chen, J. Chen, T. Sekiguchi, M. Saito and K. Kimoto, J. Appl. Phys. 105 (2009) p.113502.

[24] S. J. Pennycook and L. A. Boatner, Nature 336 (1988) p.565.

[25] E. J. Kirkland, R. F. Loane and J. Silcox, Ultramicroscopy 23 (1987) p.77.

[26] W. Seifert, G. Morgenstern and M. Kittler: Semicond. Sci. Technol. 8 (1993) 1687.

[27] S. Hamada, K. Kawahara, S. Tsurekawa, T. Watanabe, and T. Sekiguchi: Mater. Res. Soc. Symp. Proc. 86 (2000) 163.