Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices

Abstract:

The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices – high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field.

• Periodical: Solid State Phenomena (Volumes 168-169)
• Pages: 23-26
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.168-169.23
• Online since: December 2010
• Authors: L.V. Lutsev, A.I. Stognij, N.N. Novitskii, A.S. Shulenkov
• Keywords: Avalanche Process, Cobalt Nanoparticle, Granular Film Heterostructures, Magnetic Sensitive Field-Effect Transistors, Magnetic Sensor, Magnetoresistivity MR, Semiconductor Film Heterostructures, Spin-Dependent Potential Barrier

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