Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices

Abstract:

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The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices – high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field.

Info:

Periodical:

Solid State Phenomena (Volumes 168-169)

Main Theme:

Edited by:

V. Ustinov

Pages:

23-26

DOI:

10.4028/www.scientific.net/SSP.168-169.23

Citation:

L.V. Lutsev et al., "Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices", Solid State Phenomena, Vols. 168-169, pp. 23-26, 2011

Online since:

December 2010

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Price:

$35.00

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