Kinetic of Formation of Ni and Pd Silicides: Determination of Interfacial Mobility and Interdiffusion Coefficient by In Situ Techniques

Abstract:

The formation of metal (Ni and Pd) silicide thin films on a Si wafer is analyzed using differential scanning calorimetry (DSC) and isothermal X ray diffraction measurements. The sensitivity of DSC is remarkable even in this experimental Ni/Si and Pd/Si(001) and allows to show two steps of growth for a phase formation (lateral and normal growth). This technique is shown being of main interest for characterization of silicide formation during microelectronic industrial processes. Combining X-ray diffraction measurements and DSC measurements, the interface mobilities and the effective diffusion coefficient characterizing Ni₂Si and Pd₂Si growth are measured. These quantities as well as the interface mobilility for lateral growth have been determined by using a model taken into account the nucleation and lateral growth as well as a normal growth controlled by diffusion and interface reaction.

• Periodical: Solid State Phenomena (Volumes 172-174)
• Pages: 640-645
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.172-174.640
• Online since: June 2011
• Authors: Khalid Hoummada, Dominique Mangelinck, Alain Portavoce
• Keywords: Differential Scanning Calorimetry (DSC), Interdiffusion, Interface Mobility, Ni, Pd, Silicide, X-Ray Diffraction (XRD)

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