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Electron Mobility Model of Strained Si1-xGex(001)

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Abstract:

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGex materials and the design of devices.

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Periodical:

Solid State Phenomena (Volumes 181-182)

Pages:

378-382

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.181-182.378

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Online since:

November 2011

Authors:

Hui Yong Hu, Shuai Lei, He Ming Zhang, Rong Xi Xuan, Bin Shu

Keywords:

Electron Mobility, Scattering Rate, Strained SiGe

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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