Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

Abstract:

The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

• Periodical: Solid State Phenomena (Volumes 181-182)
• Pages: 401-404
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.181-182.401
• Online since: November 2011
• Authors: Lan Li Chen, Sheng Zhao Wang, Ying Peng Yin, Ming Ji Shi
• Keywords: Plasma Enhanced Chemical Vapor Deposition (PECVD), Silicon Thin Film, Substrate Temperature

References

[1] H. Fujiwara, T. Kaneko and M. Kondo: Appl. Phys. Lett. Vol. 91 (2007), p.133508.

[2] H. Fujiwara and M. Kondo:J. Appl. Phys., Vol. 101 (2007), p.054516.

[3] R. Dewarrat and J. Robertson: Thin Solid Films Vol. 427 (2003), p.11.

[4] J. X. Lu, S. T. Wen, X. J. Guo, R. Li and L. Zhang: J. of Zheng Zhou Univ. Vol. 140 (2008), p.78.

[5] Y. S. Chen, J. H. Wang, J. X. Lu et al.: Chinese Physics B Vol. 17 (2008), p.3464.

[6] S. Z. Wang, J. X. Lu, H. J. Wang, P. Liu, Y. S. Chen, S. E. Yang and X.Y. Gao: Renewable Energy, Vol. 128 (2006), p.18.