Annealing of a-Si:H Thin Film by Rapid Thermal Process

Abstract:

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Undoped amorphous silicon film deposited by PECVD,and annealed by rapid tharmal process,then have been studied by using micro-Raman scattering, X-ray diffraction and scanning electron microscope.It is found that crystallized silicon films is different at different annealing temperatures, there exists a better annealing temperature.

Info:

Periodical:

Solid State Phenomena (Volumes 181-182)

Edited by:

Yuan Ming Huang

Pages:

409-412

DOI:

10.4028/www.scientific.net/SSP.181-182.409

Citation:

Y. C. Wang and R. M. Jin, "Annealing of a-Si:H Thin Film by Rapid Thermal Process", Solid State Phenomena, Vols. 181-182, pp. 409-412, 2012

Online since:

November 2011

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Price:

$35.00

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