Annealing of a-Si:H Thin Film by Rapid Thermal Process
Undoped amorphous silicon film deposited by PECVD,and annealed by rapid tharmal process,then have been studied by using micro-Raman scattering, X-ray diffraction and scanning electron microscope.It is found that crystallized silicon films is different at different annealing temperatures, there exists a better annealing temperature.
Yuan Ming Huang
Y. C. Wang and R. M. Jin, "Annealing of a-Si:H Thin Film by Rapid Thermal Process", Solid State Phenomena, Vols. 181-182, pp. 409-412, 2012