Annealing of a-Si:H Thin Film by Rapid Thermal Process

Yu Cang Wang; Rui Min Jin

doi:10.4028/www.scientific.net/SSP.181-182.409

Paper Titles

Synthesis of Monodisperse Fe₃O₄ and MnFe₂O₄ Nanospheres by Using a Solvothermal Reduction Method
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Mesophase and Optical Properties of Side Chain Copolyacrylate with Mesogens and OLLA Segments Side Chains
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Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition
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Microwave Dielectric Properties of Ca[(Li_1/3Nb_2/3)_0.95Zr_0.05]O_3−δ−xTiO₂ Ceramics
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Annealing of a-Si:H Thin Film by Rapid Thermal Process
p.409

Investigation of Quantum Beatings at 608 cm^-1 and 70 cm^-1 in Rb Vapor
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Effect of Sodium Chloride on the Sol-Gel Synthesized Silica Colloidal Particles
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Structure and Raman Investigations of Nitrogen-Doped TiO₂ Nanotube Arrays
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Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 181-182Annealing of a-Si:H Thin Film by Rapid Thermal...

Annealing of a-Si:H Thin Film by Rapid Thermal Process

Abstract:

Undoped amorphous silicon film deposited by PECVD,and annealed by rapid tharmal process,then have been studied by using micro-Raman scattering, X-ray diffraction and scanning electron microscope.It is found that crystallized silicon films is different at different annealing temperatures, there exists a better annealing temperature.