Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films

Abstract:

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By PECVD deposition technology, we mainly investigated the influence of PRF (radio frequency power) on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with RF power. The silicon thin film crystallization ratio and grain size changed sharply when PRF =70 W. On this work we think ideal μc-Si:H can be obtained at PRF= 70 W and in the suitable experimental conditions.

Info:

Periodical:

Solid State Phenomena (Volumes 181-182)

Edited by:

Yuan Ming Huang

Pages:

426-429

DOI:

10.4028/www.scientific.net/SSP.181-182.426

Citation:

S. Z. Wang et al., "Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films", Solid State Phenomena, Vols. 181-182, pp. 426-429, 2012

Online since:

November 2011

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Price:

$35.00

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