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Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films

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Abstract:

By PECVD deposition technology, we mainly investigated the influence of PRF (radio frequency power) on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with RF power. The silicon thin film crystallization ratio and grain size changed sharply when PRF =70 W. On this work we think ideal μc-Si:H can be obtained at PRF= 70 W and in the suitable experimental conditions.

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Periodical:

Solid State Phenomena (Volumes 181-182)

Pages:

426-429

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.181-182.426

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Online since:

November 2011

Authors:

Sheng Zhao Wang, Dan Zhang, Ying Peng Yin, Ming Ji Shi, Da Yong Huang, Jia Hui Yu

Keywords:

Plasma Enhanced Chemical Vapor Deposition (PECVD), Radio Frequency Power, Silicon Thin Film

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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