Microstructure Investigation in Thin Films WO3 Produced by Pulsed Laser Deposition

Agnieszka Kopia

doi:10.4028/www.scientific.net/SSP.186.164

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Microstructure Investigation in Thin Films WO₃ Produced by Pulsed Laser Deposition

Abstract:

The WO3 films were grown by pulsed laser deposition on Si [100] substrate, using an Nd-YAG laser (=355 mm, LOTIS TII). The substrate was heated from 25°C up to 650°C and the films were deposited in oxygen pressures 5 Pa. To characterize the structure and morphology of the surface we used the XPS, Transmission and High Resolution Electron Microscopy (TEM, HREM). From XPS analyses, it was clearly established, that even though in PLD process was used oxygen atmosphere in thin films we observed two phases WO3 and small amount WO2. The amorphous structure with small crystalline we observed in thin films obtained at ambiance temperature. At temperature T = 650 °C TEM analysis show crystalline structure with crystalline about 5 ÷ 10 nm.

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Solid State Phenomena (Volume 186)

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164-167

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https://doi.org/10.4028/www.scientific.net/SSP.186.164

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March 2012

Authors:

Agnieszka Kopia

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HREM, Laser Ablation, Thin Films WO₃, XPS

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